Journal of Semiconductors

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Volume 3, Issue 2, Feb 1982

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CONTENTS

用C-V法同时测量半导体中深中心和浅杂质的浓度分布

秦国刚, 杜永昌, 张玉峰

Chin. J. Semicond. 1982, 3(2): 89-94

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 89.

秦国刚, 杜永昌, 张玉峰. 用C-V法同时测量半导体中深中心和浅杂质的浓度分布[J]. Chin. J. Semicond., 1982, 3(2): 89..Export: BibTex EndNote

秦国刚, 杜永昌, 张玉峰. 用C-V法同时测量半导体中深中心和浅杂质的浓度分布[J]. Chin. J. Semicond., 1982, 3(2): 89...

用X射线双晶及三晶衍射仪测量晶片的研磨和抛光损伤

许顺生, 徐景阳, 谭儒环

Chin. J. Semicond. 1982, 3(2): 95-101

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 95.

许顺生, 徐景阳, 谭儒环. 用X射线双晶及三晶衍射仪测量晶片的研磨和抛光损伤[J]. Chin. J. Semicond., 1982, 3(2): 95..Export: BibTex EndNote

许顺生, 徐景阳, 谭儒环. 用X射线双晶及三晶衍射仪测量晶片的研磨和抛光损伤[J]. Chin. J. Semicond., 1982, 3(2): 95...

饱和电容法快速确定体产生寿命和表面产生速度

张秀淼

Chin. J. Semicond. 1982, 3(2): 102-106

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 102.

张秀淼. 饱和电容法快速确定体产生寿命和表面产生速度[J]. Chin. J. Semicond., 1982, 3(2): 102..Export: BibTex EndNote

张秀淼. 饱和电容法快速确定体产生寿命和表面产生速度[J]. Chin. J. Semicond., 1982, 3(2): 102...

应用SEM和V-I特性研究1.3μmInGaAsP/InP DH激光器中掺杂的影响

葛玉如, 高淑芬, 王莉, 汪孝杰, 张盛廉, 朱龙德

Chin. J. Semicond. 1982, 3(2): 107-112

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 107.

葛玉如, 高淑芬, 王莉, 汪孝杰, 张盛廉, 朱龙德. 应用SEM和V-I特性研究1.3μmInGaAsP/InP DH激光器中掺杂的影响[J]. Chin. J. Semicond., 1982, 3(2): 107..Export: BibTex EndNote

葛玉如, 高淑芬, 王莉, 汪孝杰, 张盛廉, 朱龙德. 应用SEM和V-I特性研究1.3μmInGaAsP/InP DH激光器中掺杂的影响[J]. Chin. J. Semicond., 1982, 3(2): 107...

DH激光器电光延迟时间与注入脉冲电流的关系及其测量

王守武, 赵礼庆, 张存善, 邓生贵

Chin. J. Semicond. 1982, 3(2): 113-119

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null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 113.

王守武, 赵礼庆, 张存善, 邓生贵. DH激光器电光延迟时间与注入脉冲电流的关系及其测量[J]. Chin. J. Semicond., 1982, 3(2): 113..Export: BibTex EndNote

王守武, 赵礼庆, 张存善, 邓生贵. DH激光器电光延迟时间与注入脉冲电流的关系及其测量[J]. Chin. J. Semicond., 1982, 3(2): 113...

LC3型离子注入机的研制和应用

屈保春

Chin. J. Semicond. 1982, 3(2): 120-126

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 120.

屈保春. LC3型离子注入机的研制和应用[J]. Chin. J. Semicond., 1982, 3(2): 120..Export: BibTex EndNote

屈保春. LC3型离子注入机的研制和应用[J]. Chin. J. Semicond., 1982, 3(2): 120...

LSI CAD制版中的基本单元自动选择

庄文君

Chin. J. Semicond. 1982, 3(2): 127-135

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 127.

庄文君. LSI CAD制版中的基本单元自动选择[J]. Chin. J. Semicond., 1982, 3(2): 127..Export: BibTex EndNote

庄文君. LSI CAD制版中的基本单元自动选择[J]. Chin. J. Semicond., 1982, 3(2): 127...

硅中注入高剂量氮离子的研究

孙慧玲, 陈鸣, 王培大

Chin. J. Semicond. 1982, 3(2): 136-140

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 136.

孙慧玲, 陈鸣, 王培大. 硅中注入高剂量氮离子的研究[J]. Chin. J. Semicond., 1982, 3(2): 136..Export: BibTex EndNote

孙慧玲, 陈鸣, 王培大. 硅中注入高剂量氮离子的研究[J]. Chin. J. Semicond., 1982, 3(2): 136...

InGaSn/Si接触电势差的测量

徐至中, 梁励芬

Chin. J. Semicond. 1982, 3(2): 141-143

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null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 141.

徐至中, 梁励芬. InGaSn/Si接触电势差的测量[J]. Chin. J. Semicond., 1982, 3(2): 141..Export: BibTex EndNote

徐至中, 梁励芬. InGaSn/Si接触电势差的测量[J]. Chin. J. Semicond., 1982, 3(2): 141...

关于ZnO的价带结构

张光寅

Chin. J. Semicond. 1982, 3(2): 144-146

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 144.

张光寅. 关于ZnO的价带结构[J]. Chin. J. Semicond., 1982, 3(2): 144..Export: BibTex EndNote

张光寅. 关于ZnO的价带结构[J]. Chin. J. Semicond., 1982, 3(2): 144...

微波无损伤法测半导体材料电阻率

王宗欣, 赵惠芬, 胡鸣华

Chin. J. Semicond. 1982, 3(2): 147-150

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 147.

王宗欣, 赵惠芬, 胡鸣华. 微波无损伤法测半导体材料电阻率[J]. Chin. J. Semicond., 1982, 3(2): 147..Export: BibTex EndNote

王宗欣, 赵惠芬, 胡鸣华. 微波无损伤法测半导体材料电阻率[J]. Chin. J. Semicond., 1982, 3(2): 147...

Si-SiO_2-Al_2O_3结构的电子束辐照效应

林理彬, 田景文, 谢建华, 陈伯英, 唐方元, 熊文树, 林茂清

Chin. J. Semicond. 1982, 3(2): 151-154

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 151.

林理彬, 田景文, 谢建华, 陈伯英, 唐方元, 熊文树, 林茂清. Si-SiO_2-Al_2O_3结构的电子束辐照效应[J]. Chin. J. Semicond., 1982, 3(2): 151..Export: BibTex EndNote

林理彬, 田景文, 谢建华, 陈伯英, 唐方元, 熊文树, 林茂清. Si-SiO_2-Al_2O_3结构的电子束辐照效应[J]. Chin. J. Semicond., 1982, 3(2): 151...

砷化镓掺硫气相外延

吴赛娟, 仇兰华, 陆大成, 于清, 王瑞林

Chin. J. Semicond. 1982, 3(2): 155-158

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 155.

吴赛娟, 仇兰华, 陆大成, 于清, 王瑞林. 砷化镓掺硫气相外延[J]. Chin. J. Semicond., 1982, 3(2): 155..Export: BibTex EndNote

吴赛娟, 仇兰华, 陆大成, 于清, 王瑞林. 砷化镓掺硫气相外延[J]. Chin. J. Semicond., 1982, 3(2): 155...

GaAs-GaAlAs DH激光器暗线(DLD)的观察

陈新之, 孙体忠, 乔墉

Chin. J. Semicond. 1982, 3(2): 159-161

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 159.

陈新之, 孙体忠, 乔墉. GaAs-GaAlAs DH激光器暗线(DLD)的观察[J]. Chin. J. Semicond., 1982, 3(2): 159..Export: BibTex EndNote

陈新之, 孙体忠, 乔墉. GaAs-GaAlAs DH激光器暗线(DLD)的观察[J]. Chin. J. Semicond., 1982, 3(2): 159...

液相外延生长1.3μm GaInAsP/InP双异质结

邬祥生, 杨易, 李允平, 唐嫱妹, 水海龙

Chin. J. Semicond. 1982, 3(2): 162-165

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 162.

邬祥生, 杨易, 李允平, 唐嫱妹, 水海龙. 液相外延生长1.3μm GaInAsP/InP双异质结[J]. Chin. J. Semicond., 1982, 3(2): 162..Export: BibTex EndNote

邬祥生, 杨易, 李允平, 唐嫱妹, 水海龙. 液相外延生长1.3μm GaInAsP/InP双异质结[J]. Chin. J. Semicond., 1982, 3(2): 162...

用于霍尔器件的LPE-GaAs材料

丁墨元, 施益和, 傅涛, 王岩, 李双喜

Chin. J. Semicond. 1982, 3(2): 166-168

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1982, 3(2): 166.

丁墨元, 施益和, 傅涛, 王岩, 李双喜. 用于霍尔器件的LPE-GaAs材料[J]. Chin. J. Semicond., 1982, 3(2): 166..Export: BibTex EndNote

丁墨元, 施益和, 傅涛, 王岩, 李双喜. 用于霍尔器件的LPE-GaAs材料[J]. Chin. J. Semicond., 1982, 3(2): 166...

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