Chin. J. Semicond. > Volume 12 > Issue 3 > Article Number: 177

不同阱宽的In_xGa_(1-X)As/GaAs应变量子阱的压力行为

李国华 , 郑宝真 , 韩和相 and 汪兆平

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Abstract: 在77K下测量了不同阱宽(30-160A)的In_xCa_(1-x)As/GaAs应变量子阱的静压下光致发光谱.静压范围为0-60kbar.发现导带第一子带到重空穴第一子带的激子发光峰的压力系数从 160A阱的 9.74meV/kbat增加到 30A 阱的 10.12meV/kbar.计算表明,阱变窄时电子波函数向压力系数较大的势垒层中的逐步扩展是压力系数随阱宽变小而增加的原因之一.在压力超过50kbar后观察到两个与间接跃迁有关的发光峰.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 March 1991

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