Chin. J. Semicond. > Volume 12 > Issue 3 > Article Number: 129

可调能隙的光电器件结构——(AlAs)_ (n_l)/(GaAs)_(m_l)渐变周期超晶格

王恩哥 and 王鼎盛

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Abstract: 本文提出了一种具有渐变周期的(AlAs)_(nl)/(GaAs)_(ml)(1=1,2,…)超晶格,并采用递归方法计算了这种渐变周期超晶格的电子结构.其特点是带隙E_g在空间随(n_(?),m_(?))渐变.例如,对(AlAs)_4/(GaAs)_4(AlAs)_4、/(GaAs)_5/(AlAs)_4/(GaAs)_6/(AlAs)_4/(GaAs)_7结构,带隙由短周期一端的1.93eV变到长周期一端的1.78eV.同时导、价带边得到不同的调制,因而提高了电子与空穴电离率比值,有可能应用到作光电探测材料.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 March 1991

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