Chin. J. Semicond. > 1991, Volume 12 > Issue 3 > 129-135

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可调能隙的光电器件结构——(AlAs)_ (n_l)/(GaAs)_(m_l)渐变周期超晶格

王恩哥 and 王鼎盛

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(3): 129-135
      王恩哥, 王鼎盛. 可调能隙的光电器件结构——(AlAs)_ (n_l)/(GaAs)_(m_l)渐变周期超晶格[J]. 半导体学报(英文版), 1991, 12(3): 129-135.
      Citation:
      王恩哥, 王鼎盛. 可调能隙的光电器件结构——(AlAs)_ (n_l)/(GaAs)_(m_l)渐变周期超晶格[J]. 半导体学报(英文版), 1991, 12(3): 129-135.
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      • Received Date: 2015-08-19

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