Chin. J. Semicond. > Volume 17 > Issue 2 > Article Number: 88

GaInP材料生长及其性质研究

董建荣,刘祥林,陆大成,汪度,王晓晖,王占国

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Abstract: 用X光双晶衍射、Hall和光致发光研究了MOCVD生长的GaxIn1-xP(x=0.476~0.505)外延层.发现Ga组分随V/Ⅲ比的增大略有下降,认为是由于Ga-P键比In-P键强所造成的.77K下电子迁移率达3300cm2/(V·s).Ga0.5In0.5P的载流子浓度随生长温度升高、V/Ⅲ比的增大而降低,提出磷(P)空位(Vp)是自由载流子的一个重要来源.17K下PL峰能和计算的带隙最大相差113meV,这可能与GaInP中杂质或缺陷以及其中存在有序结构有关.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 February 1996

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