Chin. J. Semicond. > Volume 17 > Issue 2 > Article Number: 93

SIMOX材料的TEM研究

李映雪,奚雪梅,王兆江,张兴,王阳元,林成鲁

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Abstract: 在注入能量为170keV,注入剂量从0.6×1018/cm2到1.8×1018/cm2范围,改变注入方式,利用TEM技术观察了形成SIMOX的结构.注入剂量为0.6×1018/cm2时,可以获得连续的SiO2埋层且顶部硅层基本上无穿通位错产生;注入剂量为1.5×1018/cm2时,采用双重注入可以获得质量很好的SIMOX结构,顶部硅层仅有较少的穿通位错;注入剂量为1.8×1018/cm2时,三重注入可以获得质量好的SIMOX结构,顶部硅层穿通位错稍多.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 February 1996

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