Chin. J. Semicond. > Volume 17 > Issue 2 > Article Number: 98

Fowler-Nordheim高电场应力引起的MOS结构损伤研究

高文钰,严荣良

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文研究了Fowler-Nordheim高电场应力引起的MOS结构损伤及其室温退火.结果表明有四种损伤产生:氧化物正电荷建立、Si/SiO2快界面态增长、慢界面态产生和栅介质电容下降.当终止应力后,前三种损伤在室温下有所恢复,但最后一种损伤没有变化.实验还表明:产生的慢界面态分布在禁带上半部;高电场下栅介质电容呈现无规阶梯型下降.对四种损伤及其室温退火机理进行了讨论.还给出产生的慢界面态对高频电容-电压测量的影响.

Search

Advanced Search >>

Article Metrics

Article views: 1583 Times PDF downloads: 900 Times Cited by: 0 Times

History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 February 1996

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误