Chin. J. Semicond. > Volume 17 > Issue 9 > Article Number: 664

用全扩散法制作MCT

张发生,周如培,周宝霞,陈治明.

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Abstract: 使用普通P型硅片,用全扩散工艺制作MCT.除开通与关断MOS外,全部器件用常规晶闸管工艺制造.试制品主要电特性达到设计要求,说明了利用全扩散工艺制造MCT的可行性.文中讨论了适合于全扩散工艺的器件结构设计思路,报道了样品的测试结果,并对试制工作进行了简单分析.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 September 1996

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