Chin. J. Semicond. > Volume 8 > Issue 1 > Article Number: 20

无定形硅锡合金薄膜特性的研究

李长健 , 殷永柏 and 徐温元

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Abstract: 用SiH_4和SnCl_4作源,用 GD工艺制备了无定形硅锡合金.随着锡含量的增加,合金膜的光学带隙和光电导率均单调下降,导电类型由N型变为P型.随着光学带隙的减小,激活能先增加后减小,室温暗电导率首先下降然后逐渐上升. 我们在a-SiSn(Cl,H)中掺入一定量的磷作为补偿.当磷的浓度达到某适当值时,合金膜的光电导率可以增加2—3个数量级,同时导电类型由P型又变为N型. 用恒定光电流法对a-SiSn(Cl,H)膜的低吸收系数区进行测量,对测量结果进行了讨论.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1987

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