Chin. J. Semicond. > Volume 18 > Issue 1 > Article Number: 22

极低暗电流InGaAs MSM-PD的光电特性研究

朱红卫 , 史常忻 , 陈益新 and 李同宁

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文首次采用双重肖特基势垒增强层技术,制作了InGaAsMSMS-PD光电探测器.实际结构表明:具有15nm的P-InP和100nmInP双重势垒增强层的器件极大地减小了暗电流,器件的暗电流均小于10nA,响应度为0.83A/W,FWHM为70ps,证明这是一种减小MSM-PD暗电流的有效设计方法.

Search

Advanced Search >>

Article Metrics

Article views: 1905 Times PDF downloads: 1473 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1997

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误