Chin. J. Semicond. > Volume 10 > Issue 2 > Article Number: 158

一种亚微米垂直硅墙的刻蚀方法

汤玉生 and 蒋建飞

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Abstract: 亚微米垂直硅墙的制备是垂直硅薄膜耦合约瑟夫逊结的关键工艺.本文作者在普通光刻设备基础上,开发了一种在〈100〉硅片上制备亚微米硅墙的刻蚀方法:首先用普通光刻手段刻出较宽的墙区;其次,对非墙区进行迭加注入掺杂;第三,杂质高温横向扩散,第四,掺杂选择性刻蚀;第五,高温氧化减薄.实验结果表明,这种方法可以获得墙宽为0.29μm,墙高为1μm左右的硅墙,而且还有一定的改进潜力.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1989

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