Chin. J. Semicond. > 1989, Volume 10 > Issue 2 > 158-160

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一种亚微米垂直硅墙的刻蚀方法

汤玉生 and 蒋建飞

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(2): 158-160
      汤玉生, 蒋建飞. 一种亚微米垂直硅墙的刻蚀方法[J]. 半导体学报(英文版), 1989, 10(2): 158-160.
      Citation:
      汤玉生, 蒋建飞. 一种亚微米垂直硅墙的刻蚀方法[J]. 半导体学报(英文版), 1989, 10(2): 158-160.
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      • Received Date: 2015-08-19

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