Chin. J. Semicond. > Volume 18 > Issue 5 > Article Number: 337

气氛掺氮直拉硅单晶中氮关施主的光热电离光谱研究

张溪文 , 阙端麟 , 石晓红 and 沈学础

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Abstract: 以光热电离光谱方法指证了减压充氮气氛下生长的微氮直拉硅单晶中的氮关浅施主NRD(NitrogenRelatedDonor).确认NRD的形成温区为300~800℃,900℃以上退火将被不可逆消除.指出NRD可能有N-O复合体和氧凝聚态浅施主两种形式,各有不同的热处理行为.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 May 1997

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