Chin. J. Semicond. > Volume 15 > Issue 5 > Article Number: 312

气态源分子束外延(AlGa)InP和GaInP/AlInP多量子阱材料

袁瑞霞,阎春辉,国红熙,李晓兵,朱世荣,李灵肖,曾一平,孔梅影

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Abstract: 我们用国产第一台化学束外延(CBE)系统,采用气态源分子束外延(GSMBE)技术研制了与GaAs匹配的,性能良好的(AlGa)InP材料和GalnP/AlInP多量子阱材料.对这些材料进行了霍耳,光致发光(PL),阴极荧光(CL)以及X射线双晶衍射(XRD)等测量分析.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 May 1994

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