Chin. J. Semicond. > Volume 13 > Issue 11 > Article Number: 668

硅中氧的高空间分辨本领红外光谱

陈辰嘉 , A.Borghesi , A.Sassella and B.Pivac

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 用高空间分辨本领的富利埃变换红外光谱研究了CZ法生长硅薄片中氧的沉淀.用此技术我们能探测到单个沉淀物的聚集所贡献的1230cm~(-1)处的吸收带.实验发现在1100℃退火80分钟就足以形成薄层盘形的SiO_2沉淀物.获得的样品中沉淀物的空间分布图表明这些沉淀物的分布是不均匀的,主要分别分布在离后表面和外延衬底界面约100μm距离内.

Search

Advanced Search >>

Article Metrics

Article views: 1703 Times PDF downloads: 1276 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 November 1992

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误