Chin. J. Semicond. > Volume 18 > Issue 7 > Article Number: 554

流体静压下研究电场畴的形成机制

孙宝权 , 刘振兴 and 江德生

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Abstract: 本文利用流体静压方法研究了掺杂弱耦合GaAs/AIAs超晶格中电场畴的形成机制.对于第一个电流类平台区域,我们观察到两种级联共振隧穿过程,即当p≤2kbar时,高场畴为Γ-Γ级联共振隧穿过程,而当p>2kbar时,高场畴为Γ-X级联共振隧穿过程.对于第二个电流类平台区域,高场畴常压下为Γ-X级联共振隧穿.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 July 1997

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