J. Semicond. > Volume 41 > Issue 10 > Article Number: 102702

Suppression of oxygen and carbon impurity deposition in the thermal system of Czochralski monocrystalline silicon

Jing Zhang 1, , Ding Liu 1, , and Yani Pan 2,

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Abstract: When preparing large monocrystalline silicon materials, severe carbon etching and silicide deposition often occur to the thermal system. Therefore, a suppression method that optimizes the upper insulation structure has been proposed. Assisted by the finite element method, we calculated temperature distribution and carbon deposition of heater and heat shield, made the rule of silicide and temperature distributing in the system, and we explained the formation of impurity deposition. Our results show that the optimized thermal system reduces carbon etching loss on heat components. The lowered pressure of the furnace brings a rapid decrease of silicide deposition. The increase of the argon flow rate effectively inhibits CO and back diffusion. The simulated results agree well with the experiment observations, validating the effectiveness of the proposed method.

Key words: monocrystalline siliconcarbonsilicide depositionthermal system

Abstract: When preparing large monocrystalline silicon materials, severe carbon etching and silicide deposition often occur to the thermal system. Therefore, a suppression method that optimizes the upper insulation structure has been proposed. Assisted by the finite element method, we calculated temperature distribution and carbon deposition of heater and heat shield, made the rule of silicide and temperature distributing in the system, and we explained the formation of impurity deposition. Our results show that the optimized thermal system reduces carbon etching loss on heat components. The lowered pressure of the furnace brings a rapid decrease of silicide deposition. The increase of the argon flow rate effectively inhibits CO and back diffusion. The simulated results agree well with the experiment observations, validating the effectiveness of the proposed method.

Key words: monocrystalline siliconcarbonsilicide depositionthermal system



References:

[1]

Tavakoli M H, Renani E K, Honarmandnia M, et al. Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal. J Cryst Growth, 2018, 483, 125

[2]

Liu D, Zhao X G, Zhao Y. A review of growth process modeling and control of Czochralski silicon single crystal. Control Theory Appl, 2017, 34(1), 1

[3]

Vegad M, Bhatt N M. Effect of location of zero gauss plane on oxygen concentration at crystal melt interface during growth of magnetic silicon single crystal using Czochralski technique. Proced Technol, 2016, 23, 480

[4]

Zhao D M, Zhao D G. Analysis of the growth of GaN epitaxy on silicon. J Semicond, 2018, 39(3), 033006

[5]

Zhang J, Ren J C, Liu D. Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field. Results Phys, 2019, 13, 1

[6]

Ni Z, Liu D. Numerical simulation of MHD oscillatory mixed convection in CZ crystal growth by lattice Boltzmann method. Results Phys, 2018(10), 882

[7]

Ran T, Li Y, Chang Q, et al. Experiment and numerical simulation of melt convection and oxygen distribution in 400 mm Czochralski silicon crystal growth. Rare Met, 2017, 36(2), 134

[8]

Liu X, Gao B, Kakimoto K. Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth. J Cryst Growth, 2015, 417, 58

[9]

Lan C W. Recent progress of crystal growth modeling and growth control. Chem Eng Sci, 2004, 59(7), 1437

[10]

Vorob’ev A N, Sid’ko A P, Kalaev V V. Advanced chemical model for analysis of Cz and DS Si-crystal growth. J Cryst Growth, 2014, 386, 226

[11]

Chao H W, Ding L, Bin J S, et al. Thermo-fluid coupling of unsteady flow in Czochralski crystal growth. Acta Phys Sin, 2015, 64(20), 1

[12]

Feng Q L, He Z Q, Chang Q, et al. Effect of rapid thermal annealing ambient on gettering efficiency and surface microstructure in 300 mm CZ silicon wafers. J Semicond, 2008, 29(5), 822

[13]

Liu X, Nakano S, Kakimoto K. Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth. J Cryst Growth, 2017, 468, 595

[14]

Wang L, Horiuchi T, Sekimoto A, et al. Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC. J Cryst Growth, 2018, 5(498), 140

[15]

Wang S F, Fan M H, He Y T, et al. Catalytic conversion of biomass-derived polyols into para-xylene over SiO2-modified zeolites. Chin J Chem Phys, 2019, 32, 513

[16]

Guan X J, Zhang X Y. Simulation of V/G during Φ450 mm Czochralski grown silicon single crystal growth under the different crystal and crucible rotation rates. International Symposium on Materials Application and Engineering, 2016, 67, 02002

[1]

Tavakoli M H, Renani E K, Honarmandnia M, et al. Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal. J Cryst Growth, 2018, 483, 125

[2]

Liu D, Zhao X G, Zhao Y. A review of growth process modeling and control of Czochralski silicon single crystal. Control Theory Appl, 2017, 34(1), 1

[3]

Vegad M, Bhatt N M. Effect of location of zero gauss plane on oxygen concentration at crystal melt interface during growth of magnetic silicon single crystal using Czochralski technique. Proced Technol, 2016, 23, 480

[4]

Zhao D M, Zhao D G. Analysis of the growth of GaN epitaxy on silicon. J Semicond, 2018, 39(3), 033006

[5]

Zhang J, Ren J C, Liu D. Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field. Results Phys, 2019, 13, 1

[6]

Ni Z, Liu D. Numerical simulation of MHD oscillatory mixed convection in CZ crystal growth by lattice Boltzmann method. Results Phys, 2018(10), 882

[7]

Ran T, Li Y, Chang Q, et al. Experiment and numerical simulation of melt convection and oxygen distribution in 400 mm Czochralski silicon crystal growth. Rare Met, 2017, 36(2), 134

[8]

Liu X, Gao B, Kakimoto K. Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth. J Cryst Growth, 2015, 417, 58

[9]

Lan C W. Recent progress of crystal growth modeling and growth control. Chem Eng Sci, 2004, 59(7), 1437

[10]

Vorob’ev A N, Sid’ko A P, Kalaev V V. Advanced chemical model for analysis of Cz and DS Si-crystal growth. J Cryst Growth, 2014, 386, 226

[11]

Chao H W, Ding L, Bin J S, et al. Thermo-fluid coupling of unsteady flow in Czochralski crystal growth. Acta Phys Sin, 2015, 64(20), 1

[12]

Feng Q L, He Z Q, Chang Q, et al. Effect of rapid thermal annealing ambient on gettering efficiency and surface microstructure in 300 mm CZ silicon wafers. J Semicond, 2008, 29(5), 822

[13]

Liu X, Nakano S, Kakimoto K. Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth. J Cryst Growth, 2017, 468, 595

[14]

Wang L, Horiuchi T, Sekimoto A, et al. Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC. J Cryst Growth, 2018, 5(498), 140

[15]

Wang S F, Fan M H, He Y T, et al. Catalytic conversion of biomass-derived polyols into para-xylene over SiO2-modified zeolites. Chin J Chem Phys, 2019, 32, 513

[16]

Guan X J, Zhang X Y. Simulation of V/G during Φ450 mm Czochralski grown silicon single crystal growth under the different crystal and crucible rotation rates. International Symposium on Materials Application and Engineering, 2016, 67, 02002

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J Zhang, D Liu, Y N Pan, Suppression of oxygen and carbon impurity deposition in the thermal system of Czochralski monocrystalline silicon[J]. J. Semicond., 2020, 41(10): 102702. doi: 10.1088/1674-4926/41/10/102702.

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History

Manuscript received: 03 January 2020 Manuscript revised: 14 April 2020 Online: Accepted Manuscript: 28 May 2020 Uncorrected proof: 03 June 2020 Published: 01 October 2020

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