Chin. J. Semicond. > Volume 8 > Issue 1 > Article Number: 33

GaAs中碳局域模振动红外吸收的温度依赖关系

江德生 , 宋春英 , 郑捷飞 and 许振嘉

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Abstract: 砷化镓中C_(As)在582cm~(-1)处的局域振动模(LVM)吸收带于低温下存在精细结构,利用其中同位素效应产生的分裂谱线很锐(25K时半高宽小于0.1cm~(-1))的特点,研究了吸收谱线的频率和半高宽以及整个吸收带的积分吸收随温度的变化关系.在GaAs中,C_(As)LVM与晶格带模振动之间的非简谐耦合虽然比离子性较强的晶体中要弱,但在温度变化引起谱线发生频移和半高宽变化时,非简谐效应起了重要的作用.在一些P型和高阻样品中,C_(As)LVM吸收带的积分吸收在低温下随温度降低而反常减小,可用带负电荷的C_(As)受主中心浓度随温度降低而减少来解释,由此获得C_(As)受主消电离情况的信息.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1987

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