Chin. J. Semicond. > Volume 14 > Issue 2 > Article Number: 128

短周期(Ge)_n(Si)_n应变超晶格电子结构的自洽赝势计算

范卫军 and 顾宗权

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Abstract: 在局域密度近似下,用第一原理自洽赝势的方法计算了短周期超晶格(Ge)_1(Si)_1和(Ge)_2(Si)_2的能带结构。结果表明(Ge)_1(Si)_1是间接带,导带最低点在布里渊区的X点。(Ge)_2(Si)_2也是间接带,导带最低点在布里渊区M点附近。给出了禁带宽度及自旋轨道分裂值,并与有关的理论和实验做了比较。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1993

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