Chin. J. Semicond. > Volume 10 > Issue 10 > Article Number: 775

大功率晶体管刻槽与钝化工艺研究

万积庆 and 廖晓华

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文介绍一种光刻刻蚀造型和聚酰亚胺钝化方法.这一新方法称耗尽层刻蚀,它可以使平面型晶体管达到理想击穿电压,而只需用负角斜面所占面积的一部份,且其实际击穿电压取决于对刻蚀深度的细心控制. 实验证明:采用这一新方法可以改善功率晶体管的击穿特性;减少低压击穿;抑制小电流H_(FE)退化;减小表面漏电和改善高温反向特性.

Search

Advanced Search >>

Article Metrics

Article views: 1802 Times PDF downloads: 846 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1989

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误