Chin. J. Semicond. > Volume 10 > Issue 2 > Article Number: 148

单片集成InGaAs PIN-JFET光接收器的设计与研制

张永刚 , 富小妹 and 潘慧珍

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文报告了一种OEIC器件:单片集成InGaAs PIN-JFET光接收器的设计与研制结果.为解决光电器件与电子器件在集成上的兼容性,采用了在结构衬底上进行平面化外延的新工艺,达到了器件的准平面结构,并对器件的主要参数进行了计算,选取了较佳的载流子浓度.制成的单片集成器件中,PIN光探测器的量子效率在1.3μm处为57%,暗电流在-5V下小于100nA,JFET的跨导为34ms/mm,与计算植相符.对器件进行光接收功能测试获得了预期的结果.

Search

Advanced Search >>

Article Metrics

Article views: 1805 Times PDF downloads: 827 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1989

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误