J. Semicond. > 2016, Volume 37 > Issue 11 > Article Number: 111001

GaN-based green laser diodes

Lingrong Jiang 1, 2, , Jianping Liu 1, 2, , , Aiqin Tian 1, 2, , Yang Cheng 1, 2, , Zengcheng Li 1, 2, , Liqun Zhang 1, 2, , Shuming Zhang 1, 2, , Deyao Li 1, 2, , M. Ikeda 1, 2, and Hui Yang 1, 2,

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  • Corresponding author: Jianping Liu, LiuJianping,jpliu2010@sinano.ac.cn
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    Abstract: Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done.

    Key words: green LDsInGaNQCSEIn-rich



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    [2]

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    [3]

    Jansen M, Carey G P, Carico R. Visible laser and laser array sources for projection display[J]. Proceedings of SPIE, 2006, 6135: 198.

    [4]

    Belyanin A A, Lutgen S, Smowton P M. Progress of blue and green InGaN laser diodes[J]. Proceedings of SPIE, 2010, 7616: 76160G. doi: 10.1117/12.842131

    [5]

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    [6]

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    [7]

    Amano H. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials[J]. Prog Cryst Growth Charact Mater, 2016, 62: 126. doi: 10.1016/j.pcrysgrow.2016.04.006

    [8]

    Kozaki T, Matsumura H, Sugimoto Y. High-power and wide wavelength range GaN-based laser diodes[J]. Proceedings of SPIE, 2006, 6133: 16.

    [9]

    Nagahama S, Yanamoto T, Sano M. Wavelength dependence of InGaN laser diode characteristics[J]. Jpn J Appl Phys, 2001, 40: 3075. doi: 10.1143/JJAP.40.3075

    [10]

    Khan A. Laser diodes go green[J]. Nature Photonics, 2009, 3: 432. doi: 10.1038/nphoton.2009.124

    [11]

    Nakamura S, Senoh M, Iwasa N. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures[J]. Jpn J Appl Phys, 1995, 34: L797. doi: 10.1143/JJAP.34.L797

    [12]

    Oliver R A, Kappers M J, Humphreys C J. Growth modes in heteroepitaxy of InGaN on GaN[J]. J Appl Phys, 2005, 97: 8.

    [13]

    Kojima K, Schwarz U T, Funato M. Optical gain spectra for near UV to aquamarine (Al, In)GaN laser diodes[J]. Optics Express, 2007, 15: 7730. doi: 10.1364/OE.15.007730

    [14]

    Yang J, Zhao D G, Jiang D S. Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes[J]. Optics Express, 2016, 24: 13824. doi: 10.1364/OE.24.013824

    [15]

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    [17]

    Bai J Z, Wang T, Sakai S. Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures[J]. J Appl Phys, 2000, 88: 4729. doi: 10.1063/1.1311831

    [18]

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    Bernardini F, Fiorentini V, Vanderbilt D. Spontaneous polarization and piezoelectric constants of Ⅲ-V nitrides[J]. Phys Rev B, 1997, 56: R10024. doi: 10.1103/PhysRevB.56.R10024

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    Bernardini F, Fiorentini V. Polarization fields in nitride nanostructures:10 points to think about[J]. Appl Surf Sci, 2000, 166: 23. doi: 10.1016/S0169-4332(00)00434-7

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    L R Jiang, J P Liu, A Q Tian, Y Cheng, Z C Li, L Q Zhang, S M Zhang, D Y Li,M. Ikeda, H Yang. GaN-based green laser diodes[J]. J. Semicond., 2016, 37(11): 111001. doi: 10.1088/1674-4926/37/11/111001.

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    Manuscript received: 10 October 2016 Manuscript revised: Online: Published: 01 November 2016

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