Chin. J. Semicond. > Volume 18 > Issue 11 > Article Number: 820

Si~+注入热生长SiO_2的光致发光激发谱与光电子能谱

宋海智 and 鲍希茂

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Abstract: Si+注入的热生长SiO2,未退火及1000℃以下退火样品的光致发光谱为峰值在470nm的蓝光带,其光致发光激发谱主要为一个位于250nm的窄峰,且谱形不依赖于退火条件,光电子能谱显示样品注入层为比较均匀的SiOx;1000℃以上退火样品的发光谱为峰值在730nm的红光带,其激发谱有一个230nm的窄峰,同时在500nm附近还有一个随退火处理不断红移和增强的宽带,光电子能谱表明退火使样品注入层分离为SiO2和纳米硅晶粒两相.本文对两种发光带的复合过程、光吸收过程及其与微结构的关系进行了讨论.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 November 1997

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