Chin. J. Semicond. > Volume 18 > Issue 8 > Article Number: 561

MBE生长应变Si_(1-x)Ge_x/Si MQW结构中Ge分布的计算

司俊杰 , 杨沁清 and 王启明

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Abstract: 根据MBE实际生长条件,采用在应变Si1-xGex/SiMQW结构中同应变相关的Ge的扩散系数,用生长过程的移动边界条件,求解了Ge在Si1-xGex/SiMQW中的扩散方程,模拟出了MQW的畸变,指出了这种畸变具有固定的不对称性,并分析了不同生长温度、应变及阱宽情况下MQW的畸变.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 August 1997

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