Chin. J. Semicond. > Volume 14 > Issue 1 > Article Number: 56

高温氢气氛对SIMOX/SOI结构的损伤

李金华 , 林成鲁 , 林梓鑫 , 薛才广 and 邹世昌

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Abstract: SIMOX/SOI样品在1000~1200℃的高温H_2气氛中作不同时间(5—30分)的烘烤。结果,SOI结构受到了不同程度的损伤。测试结果表明,这种损伤包括:高温H_2使SOI结构顶层Si中缺陷的扩展,高温H_2使埋层SiO_2分解和分解后的O_2(或H_2O)在外释过程中造成表层单晶Si的损伤。高温H_2对SIMOX结构的这种损伤对SIMOX/SOI的外延是不利的。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 January 1993

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