Chin. J. Semicond. > Volume 14 > Issue 1 > Article Number: 48

CoSi_2/n—Si肖特基势垒的形成和特性

张利春 , 高玉芝 , 宁宝俊 , 洪秀花 and 王阳元

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Abstract: 本文利用XRD、RBS、AES和四探针等方法研究了不同温度快速热退火后的Co/Si结构薄膜固相反应形成钴硅化物的相序、组份和电学特性。并报道了性能优越的CoSi_2/n-Si肖特基二极管的特性,其势垒高度为0.66eV,理想因子为1.01。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 January 1993

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