Chin. J. Semicond. > 1993, Volume 14 > Issue 1 > 43-47
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p型含氮CZ—Si单晶的退火性质

陈畅生 , 曾繁清 , 曾瑞 , 陈炳若 , 龙理 , 何民才 , 张锦心 and 李立本

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(1): 43-47
      陈畅生, 曾繁清, 曾瑞, 陈炳若, 龙理, 何民才, 张锦心, 李立本. p型含氮CZ—Si单晶的退火性质[J]. 半导体学报(英文版), 1993, 14(1): 43-47.
      Citation:
      陈畅生, 曾繁清, 曾瑞, 陈炳若, 龙理, 何民才, 张锦心, 李立本. p型含氮CZ—Si单晶的退火性质[J]. 半导体学报(英文版), 1993, 14(1): 43-47.
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      • Received Date: 2015-08-20

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