Chin. J. Semicond. > Volume 14 > Issue 1 > Article Number: 36

双层金属布线硅栅CMOS门阵列电路制造工艺技术研究

郑养鉥 , 张敏 , 凌栋忠 , 吴璘 , 顾惠芬 , 郑庆云 and 邱斌

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Abstract: 采用双层金属布线可以提高集成电路的集成密度、集成度和速度。本文报道了双层金属布线工艺技术成功地应用于制造标准3μm硅栅CMOS 500门、1200门、2000门多种门阵列专用大规模集成电路。本文对双层金属布线硅栅CMOS门阵列电路制造工艺技术的几个关键技术问题进行讨论。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 January 1993

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