邢益荣 , 钟战天 , 沈光地 , 孔光临 , 廖显伯 and 杨喜荣
Abstract: 对a-Si:(H,C1)薄膜进行了XPS和UPS测量,样品是利用辉光放电方法在SiH_4+H_2加SiCl_4+H_2混合气体中生长的.XPS的结果表明,根据Cl 2p发射峰和Si2p(或2s)发身峰的强度可以定量地确定Cl与Si的原子浓度比;UPS的结果可以解释为在这种a- Si:H:Cl中同时存在Si-H和Si-Cl结合键.
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Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 June 1983
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