Chin. J. Semicond. > Volume 4 > Issue 6 > Article Number: 593

GD a-Si:(Cl,H)薄膜的ESR研究

廖显伯 , 杨喜荣 , 刘昌灵 , 孔光临 , 侯贵 and 徐广智

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Abstract: 报道了对a-Si:(Cl,H)与a-Si:H薄膜的ESR比较研究的结果.在a-Si:(Cl,H)中除g=2.005信号外未发现新的自旋信号,说明Cl原子上没有未配对电子;也没有发现在g=2.005附近有超精细结构,峰宽也无显著变化,说明Cl原子不在悬键附近.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 June 1983

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