Chin. J. Semicond. > Volume 4 > Issue 6 > Article Number: 596

在离子注入硅激光退火时引入缺陷

鲍希茂 , 黄信凡 , 郭禾 and 张梅

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Abstract: 我们用CWCO_2激光对注B~+硅片从背面进行辐照,注入的样品受到激光退火的同时,在背面附近的体内引入了大量的晶格损伤.这些损伤可以作为有害杂质的非本征吸杂源.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 June 1983

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