Chin. J. Semicond. > Volume 4 > Issue 6 > Article Number: 601

离子注入氮化硅隔离的CMOS器件

刘忠立 , 伏·车慈曼 , 依·罗伯特 and 格·启姆

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Abstract: 本文描述用离子注入氮化硅层隔离的单晶硅膜制作的CMOS器件.给出这种CMOS器件的工艺方法以及晶体管和倒相器的特性,讨论这种技术的发展前景.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 June 1983

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