Chin. J. Semicond. > Volume 10 > Issue 12 > Article Number: 912

热退火对分子束外延生长的高纯GaAs薄膜中深能级的影响

徐鸿达 and T.G.Andersson

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Abstract: 用深能级瞬态谱(DLTS)研究了分子束外延生长的高纯GaAs薄膜中的深能级.带金电极的高纯GaAs薄膜经不同温度的热退火,其DLTS峰谱的位置和幅度均发生变化.这是由于在热退火中金电极与GaAs反应,从而出现各种各样的DLTS峰谱.来用器件制造的台面腐蚀工艺去除反应物后的DLTS峰谱退化为一个单峰谱.本文结合伏安特性的测量结果对DLTS峰谱的变化进行了分析和讨论.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 December 1989

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