Chin. J. Semicond. > Volume 15 > Issue 5 > Article Number: 329

GaAs/AlGaAs单量子阱中界面粗糙度散射

王杏华,郑厚植,余涛

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Abstract: 对三种不同生长条件、不同质量的GaAs/AlGaAs单量子阱进行了输运性质和光致发光谱的研究.在低迁移率的样品中,界面粗糙度对二维电子气的散射起主导作用.我们的研究也表明了:采用(GaAs)4/(AlAs)2超晶格代替常规的AlGaAs层,或在异质结界面生长过程中的停顿,都能有效地减少界面粗糙度.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 May 1994

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