Chin. J. Semicond. > 1991, Volume 12 > Issue 2 > 80-86
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退火损伤对Er注入GaAs和Yb注入InP发光的影响

曹望和 and 张联苏

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(2): 80-86
      曹望和, 张联苏. 退火损伤对Er注入GaAs和Yb注入InP发光的影响[J]. 半导体学报(英文版), 1991, 12(2): 80-86.
      Citation:
      曹望和, 张联苏. 退火损伤对Er注入GaAs和Yb注入InP发光的影响[J]. 半导体学报(英文版), 1991, 12(2): 80-86.
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      • Received Date: 2015-08-19

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