Chin. J. Semicond. > Volume 12 > Issue 2 > Article Number: 80

退火损伤对Er注入GaAs和Yb注入InP发光的影响

曹望和 and 张联苏

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Abstract: 本文报道了CaAs∶Er、InP∶Yb发光样品的二次离子质谱、X-射线双晶衍射测量结果及其与Er离子的表面成份的关系.分析讨论了退火损伤对GaAs∶Er和InP∶Yb发光的影响以及Er~(3+)复合体发光中心模型.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1991

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