Abstract: <正> 由于InP具有高的峰谷比,高的电子漂移速度和快的谷间散射.使其成为微波和光电器件方面有前途的新材料. 本工作企图采用 In/PCl_3/H_2体系,汽相生长满足器件要求的 InP外延材料.实验方法如下: 采用与GaAs汽相外延相似的装置:主路接PCl_3料瓶,旁路接掺杂“S”料瓶和供汽
Article views: 1686 Times PDF downloads: 1161 Times Cited by: 0 Times
Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1983
WeChat ID
Mobile Terminal
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
