Chin. J. Semicond. > Volume 4 > Issue 2 > Article Number: 197

汽相外延InP

黄善祥

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Abstract: <正> 由于InP具有高的峰谷比,高的电子漂移速度和快的谷间散射.使其成为微波和光电器件方面有前途的新材料. 本工作企图采用 In/PCl_3/H_2体系,汽相生长满足器件要求的 InP外延材料.实验方法如下: 采用与GaAs汽相外延相似的装置:主路接PCl_3料瓶,旁路接掺杂“S”料瓶和供汽

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1983

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