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Chin. J. Semicond. > Volume 13 > Issue 10 > Article Number: 623

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InAsPSb/InAs中红外光电探测器

张永刚 , 周平 , 单宏坤 and 潘慧珍

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Abstract: 本文报告了采用外延工艺研制的InAsPSb/InAs中红外(1—3.2μm)光电探测器.该器件为台面型结构,响应波长与氟化物光纤的低损耗窗口相匹配,在室温零偏压条件下峰值探测率达4×10~9cmHz~(1/2)/W,瞬态响应时间为1.2ns(FWHM).

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1992

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