2019年JOS入选“中国科技期刊卓越行动计划”

2020年11月JOS被EI数据库收录

Chin. J. Semicond. > Volume 10 > Issue 2 > Article Number: 143

Previous Article

|

Next Article

1.5μm InGaAsP/InP P型衬底隐埋新月型(PBC)结构激光器

彭怀德 , 马朝华 , 汪孝杰 , 张盛廉 , 吕卉 , 王丽明 , 武淑珍 , 马骁宇 and 张洪琴

+ Author Affiliations + Find other works by these authors

Abstract: 本文简要报道了P型衬底1.5μm隐埋新月型激光器的制备和特性,激光器在室温下连续工作的典型阈值电流为20mA低的为15mA,发射波长为1.53μm,最高连续工作温度105℃.

Search

Share:

Article Metrics

Article views: 1751 Times PDF downloads: 983 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1989

Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2