Chin. J. Semicond. > Volume 13 > Issue 2 > Article Number: 75

黄昆X射线漫散射的实验研究

蒋四南

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Abstract: 本文描述了黄昆X射线漫散射的实验方法及其所需的实验条件,并利用它研究了离子注入CaAs中点缺陷所引起的黄昆散射,在同一GaAs晶片上的不同部分分别注入Mo和Er,浓度均为1×10~(15)cm~(-2),注入电压为500keV,经850℃退火30分钟后分别在77K的条件下进行黄昆散射测量,实验观测到注入Er元素比Mo元素引起的黄昆散射要强,这一结果表明Er元素在GaAs中大多处于间隙状态,而Mo元素在GaAs中大多处于替换状态.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1992

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