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Chin. J. Semicond. > Volume 4 > Issue 2 > Article Number: 187

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GaAs_(1-x)P_x中N-等电子陷阱的研究

李涵秋 and 陆奋

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Abstract: 本文用集团模型EHT方法计算GaAs_(1-x)Px中的N-等电子陷阱能级.计算表明,必须计入原子的激发态轨道才能使结果得到较为实质的改善.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1983

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