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Chin. J. Semicond. > Volume 18 > Issue 2 > Article Number: 113

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硅衬底上铁电薄膜的自偏压异质结效应

于军 , 周文利 , 曹广军 , 谢基凡 and 吴正元

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Abstract: 本文运用半导体能带理论探讨了硅衬底上铁电薄膜的异质结效应的物理模型．对用sol－gel工艺制备的PZT／Si结构的极化特性、开关特性和I－V特性的实验研究证实了这种效应．

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1997

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