Chin. J. Semicond. > Volume 18 > Issue 2 > Article Number: 108

808nm GaAs/AlGaAs大功率半导体激光器波长的影响因素及控制

朱东海 , 梁基本 , 徐波 , 朱战萍 , 张隽 , 龚谦 , 李胜英 and 王占国

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Abstract: 通过对影响GaAs/AlGaAs激光器波长的各种因素的分析讨论与实验研究,制备了性能优良的808umGaAs/AlGaAs大功率激光器材料.应用此材料制作的激光器的结果表明,器件室温连续输出功率1W时,激射波长仍可保持在808nm附近,器件的室温连续输出功率已达2.3W.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1997

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