Chin. J. Semicond. > Volume 18 > Issue 2 > Article Number: 103

Triode PECVD氢稀释制备的nc-Si:H薄膜的新结果

秦华 , 陈坤基 , 黄信凡 and 李伟

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Abstract: 采用三极管型等离子体增强化学汽相淀积(TriodePECVD)系统,适当选取硅烷(SiH4)和氢气(H2)流量比制备纳米硅(nc-Si:H)薄膜.保持栅极偏压为-100V,改变SiH4、H2流量比可以得到薄膜从非晶硅(a-Si:H)到nc-Si:H的结构转变,其氢气流量比例[H2]/([H2]+[SiH4])的阈值为93.3%.随着流量比进一步增大,晶化比例从12%增大至50%,但晶粒尺寸基本保持不变,nc-Si晶粒的平均尺寸约2.5nm,这是不同于常规二极管PECVD、氢稀释制备的nc-Si:H薄膜的新结果,并从实验上验证了电导率和电子迁移率的渗流现象.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1997

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