Chin. J. Semicond. > 1997, Volume 18 > Issue 2 > 103-107
|

CONTENTS

Triode PECVD氢稀释制备的nc-Si:H薄膜的新结果

秦华 , 陈坤基 , 黄信凡 and 李伟

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2509 Times PDF downloads: 1524 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(2): 103-107
      秦华, 陈坤基, 黄信凡, 李伟. Triode PECVD氢稀释制备的nc-Si:H薄膜的新结果[J]. 半导体学报(英文版), 1997, 18(2): 103-107.
      Citation:
      秦华, 陈坤基, 黄信凡, 李伟. Triode PECVD氢稀释制备的nc-Si:H薄膜的新结果[J]. 半导体学报(英文版), 1997, 18(2): 103-107.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return