Chin. J. Semicond. > Volume 19 > Issue 8 > Article Number: 569

氩离子轰击对射频溅射法制备的a-SiC∶H膜退火形成6H-SiC的影响

王辉耀 , 王印月 , 宋青 and 王天民

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Abstract: 本文对射频溅射法淀积的a-SiC∶H膜热退火形成6H-SiC相进行了研究.我们采用红外透射谱、喇曼背散射谱和X光衍射谱来研究退火形成6H-SiC的过程.在较高的射频功率下淀积的a-SiC∶H膜经800℃60分钟等时退火后转变为6H-SiC相,该温度低于在低功率下制备的a-SiC∶H形成6H-SiC的温度(1000℃).高功率可导致6H-SiC形成温度的降低与膜中硅及石墨团簇的消失,同时高能量的氩离子轰击可使膜中氢含量减少及各组分均相.通过改变射频功率,本文研究了氩离子轰击对a-SiC∶H膜及形成6H-Si

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 August 1998

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