Chin. J. Semicond. > 1993, Volume 14 > Issue 2 > 111-117
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热处理CZ—Si中氧化物沉淀早期发展的研究

栾洪发 , 肖治纲 and 柯俊

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(2): 111-117
      栾洪发, 肖治纲, 柯俊. 热处理CZ—Si中氧化物沉淀早期发展的研究[J]. 半导体学报(英文版), 1993, 14(2): 111-117.
      Citation:
      栾洪发, 肖治纲, 柯俊. 热处理CZ—Si中氧化物沉淀早期发展的研究[J]. 半导体学报(英文版), 1993, 14(2): 111-117.
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      • Received Date: 2015-08-20

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