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Chin. J. Semicond. > Volume 14 > Issue 2 > Article Number: 111

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热处理CZ—Si中氧化物沉淀早期发展的研究

栾洪发 , 肖治纲 and 柯俊

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Abstract: 本文利用TEM研究了850℃热处理直拉硅单晶中的氧化物沉淀行为。通过不同预处理样品的对比,得出点状沉淀是片状沉淀前身的结论。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1993

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