余山 , 章定康 and 黄敞
Abstract: 本文对 L=0.55μm LDD MOSFET’s的杂质分布及侧墙工艺进行了研究,提出了亚微米 LDD MOSFET’s集成电路的优化工艺设计.
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Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 July 1992
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