Chin. J. Semicond. > Volume 13 > Issue 7 > Article Number: 423

亚微米LDD MOSFET’s集成电路的优化设计及研制

余山 , 章定康 and 黄敞

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Abstract: 本文对 L=0.55μm LDD MOSFET’s的杂质分布及侧墙工艺进行了研究,提出了亚微米 LDD MOSFET’s集成电路的优化工艺设计.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 July 1992

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