Abstract: 本文用加栅的光电流瞬态谱(PICTS)方法研究了半绝缘砷化镓材料中的深能级缺陷,发现加栅后可使PICTS对EL2等靠近禁带中央的缺陷变得灵敏,并分析了其中原因,认为材料中费米能级位置对PICTS结果有影响。
Article views: 1836 Times PDF downloads: 844 Times Cited by: 0 Times
Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 November 1993
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2