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Chin. J. Semicond. > Volume 14 > Issue 11 > Article Number: 659

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光电流瞬态谱中半绝缘砷化镓的EL2峰的研究

龚大卫 and 孙恒慧

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Abstract: 本文用加栅的光电流瞬态谱(PICTS)方法研究了半绝缘砷化镓材料中的深能级缺陷,发现加栅后可使PICTS对EL2等靠近禁带中央的缺陷变得灵敏,并分析了其中原因,认为材料中费米能级位置对PICTS结果有影响。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 November 1993

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