Chin. J. Semicond. > Volume 14 > Issue 2 > Article Number: 67

极性半导体中表面激子的性质

孙宝权 and 肖景林

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Abstract: 本文研究极性半导体中表面激子的性质,采用微扰法导出表面激子的有效哈密顿量。在计及反冲效应中不同波矢的声子之间的相互作用时,讨论对电子、空穴间的相互作用的有效势、表面激子的自陷能和自陷条件的影响。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1993

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