Chin. J. Semicond. > Volume 18 > Issue 7 > Article Number: 544

超薄氮氧化硅(Sio_xN_y)栅NMOSFET中GIDL效应的研究

刘卫东 , 李志坚 , 刘理天 , 田立林 , 陈文松 and 熊大箐

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Abstract: MOSFET栅介质层厚度的减薄使栅致漏极的泄漏(GIDL)电流指数增强,本文报道N2O中退火SiO2(两步法)生成超薄(5.5nm)氮氧化硅(SiOxNy)栅NMOSFET中的GIDL效应,包括器件尺寸、偏置电压和热载流子效应的影响.发现GIDL在一定的偏置下成为主要的泄漏机制,且陷阱电荷和界面态对其具有显著的调制作用.二维器件模拟结果指出,与SiO2栅NMOSFET相比,LDD掺杂结构使SiOxNy栅NMOSFET的GIDL进一步增强.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 July 1997

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