Fig. 1.
(Color online) Structure of lateral PNP (LPNP) bipolar junction transistor[13].
DownLoad:
Article Navigation >
Journal of Semiconductors
>
2025
> Accepted Manuscript
| Citation: |
Shilong Gou, Wuying Ma, Zhibin Yao, Zujun Wang, Jiangkun Sheng, Yuanyuan Xue. Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices: role of hydrogen in the passivation layer[J]. Journal of Semiconductors, 2025, In Press. doi: 10.1088/1674-4926/25090014
****
S L Gou, W Y Ma, Z B Yao, Z J Wang, J K Sheng, and Y Y Xue, Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices: role of hydrogen in the passivation layer[J]. J. Semicond., 2025, accepted doi: 10.1088/1674-4926/25090014
|
Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices: role of hydrogen in the passivation layer
DOI: 10.1088/1674-4926/25090014
CSTR: 10.1088/1674-4926/25090014
More Information-
Shilong Gou received his MS degree from Xidian University, Xi'an, China, in 2019. He is currently an assistant researcher at Northwest Institute of Nuclear Technology, Xi'an, China. His research focuses on radiation effects of electronic devices - Corresponding author: shilonggouxd@163.com
- Revised Date: 2025-10-28 Available Online: 2025-11-19
-
Abstract
Enhanced low dose rate sensitivity (ELDRS) experiments were carried out on four commercial bipolar integrated circuits at dose rates ranging from 0.002 to 50 rad(Si)/s. Additionally, pre-irradiation elevated-temperature stress (PETS) experiments were conducted on the same devices at temperatures of 250 °C and 400 °C. The results show that for some devices, the radiation degradation when irradiated at an ultra-low dose rate of 0.002 rad(Si)/s is more than three times greater than that at a common low dose rate of 0.01 rad(Si)/s. Moreover, the maximum enhancement factor of the PETS effects reaches 20.3. It was also discovered that for devices exhibiting PETS effects, the saturation dose rate of ELDRS is less than 0.01 rad(Si)/s. A comprehensive analysis of the composition of the passivation layers indicated that the type and concentration of hydrogen bonds in these layers are the main factors contributing to the experimental outcomes. -
References
[1] Brunetti G, Campiti G, Tagliente M, et al. COTS devices for space missions in LEO. IEEE Access, 2024, 12, 76478 doi: 10.1109/ACCESS.2024.3405373[2] Zhao J K, Chong K S, Shu W, et al. Detection and protection of a COTS system against micro-single-event-latchups (μ-SELs) and SELs: A step toward the next-paradigm in new space. IEEE Trans Nucl Sci, 2025, 72(8), 2680 doi: 10.1109/TNS.2025.3539473[3] Benedetto A R, Barnaby H J, Cook C, et al. In-flight demonstration of enhanced-low-dose-rate-sensitivity (ELDRS) in bipolar junction transistors. 2022 IEEE Aerospace Conference (AERO), 2022, 1[4] Privat A, Barnaby H J, Tolleson B S, et al. Temperature dependence of bipolar junction transistor current-voltage characteristics after low dose rate irradiation. Microelectron Reliab, 2020, 113, 113947 doi: 10.1016/j.microrel.2020.113947[5] Fleetwood D M. Radiation effects in a post-Moore world. IEEE Trans Nucl Sci, 2021, 68(5), 509 doi: 10.1109/TNS.2021.3053424[6] Chen D K, Pease R, Kruckmeyer K, et al. Enhanced low dose rate sensitivity at ultra-low dose rates. IEEE Trans Nucl Sci, 2011, 58(6), 2983 doi: 10.1109/TNS.2011.2171720[7] Borghello G, Termo G, Faccio F, et al. ELDRS in a commercial 28-nm CMOS technology. IEEE Trans Nucl Sci, 2025, 72(8), 2276 doi: 10.1109/TNS.2025.3543658[8] Fleetwood D M, Rodgers M P, Tsetseris L, et al. Effects of device aging on microelectronics radiation response and reliability. Microelectron Reliab, 2007, 47(7), 1075 doi: 10.1016/j.microrel.2006.06.009[9] Shaneyfelt M R, Schwank J R, Witczak S C, et al. Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs. IEEE Trans Nucl Sci, 2000, 47(6), 2539 doi: 10.1109/23.903805[10] Seiler J E, Platteter D G, Dunham G W, et al. Effect of passivation on the enhanced low dose rate sensitivity of national LM124 operational amplifiers. 2004 IEEE Radiation Effects Data Workshop, 2004, 42[11] Shaneyfelt M R, Pease R L, Schwank J R, et al. Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs. IEEE Trans Nucl Sci, 2002, 49(6), 3171 doi: 10.1109/TNS.2002.805365[12] Cizmarik R R, Schrimpf R D, Fleetwood D M, et al. The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers. IEEE Trans Nucl Sci, 2005, 52(5), 1513 doi: 10.1109/TNS.2005.855815[13] Yang J Q, Dong L, Liu C M, et al. Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Phys Sin, 2018, 67(16), 168501 doi: 10.7498/aps.67.20172215[14] Pershenkov V S, Felitsyn V A, Bakerenkov A S, et al. Testing for enhanced low dose rate sensitivity and reduced low dose rate sensitivity bipolar devices. 2021 IEEE 32nd International Conference on Microelectronics (MIEL), 2021, 361[15] Chumakov A I. A new approach of simulating low-dose-rate radiation effects in bipolar integrated circuits. Russ Microelectron, 2024, 53(2), 154 doi: 10.1134/S1063739723600966[16] Giorgis F, Pirri C F, Tresso E. Structural properties of a-Si1-xNx: H films grown by plasma enhanced chemical vapour deposition by SiH4 + NH3 + H2 gas mixtures. Thin Solid Films, 1997, 307(1/2), 298[17] Hasegawa S, He L, Amano Y, et al. Analysis of SiH and SiN vibrational absorption in amorphous SiNx: H films in terms of a charge-transfer model. Phys Rev B, 1993, 48(8), 5315 doi: 10.1103/PhysRevB.48.5315[18] Tsu D V, Lucovsky G, Mantini M J. Local atomic structure in thin films of silicon nitride and silicon diimide produced by remote plasma-enhanced chemical-vapor deposition. Phys Rev B, 1986, 33(10), 7069 doi: 10.1103/PhysRevB.33.7069[19] Gou S L, Ma W Y, Yao Z B, et al. Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Asta Phys Sin, 2021, 70(15), 156101 doi: 10.7498/aps.70.20210351[20] Hjalmarson H P, Witczak S C, Roark S Z, et al. Simplified calculations of radiation dose-rate sensitivity of bipolar transistors. 2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2021, 1[21] Song Y, Qiu C, Zhou H, et al. Mechanisms and models of interface trap annealing in positively-biased MOS devices. J Phys D: Appl Phys, 2025, 58(2), 025109 doi: 10.1088/1361-6463/ad8502[22] Esqueda I S, Barnaby H J, Adell P C. Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity. IEEE Trans Nucl Sci, 2012, 59(4), 701 doi: 10.1109/TNS.2012.2195201[23] Xiang C F, Li X L, Lu W, et al. Investigation of ionization-induced parameter degradation in GLPNP bipolar transistors at different temperatures. Atomic Energy Science and Technology, 2021, 55(12), 2183[24] Fleetwood D M, Schrimpf R D, Pantelides S T, et al. Electron capture, hydrogen release, and enhanced gain degradation in linear bipolar devices. IEEE Trans Nucl Sci, 2008, 55(6), 2986 doi: 10.1109/TNS.2008.2006485 -
Proportional views
