Bei Zhao received her Ph.D. degree (2021) in Physical Chemistry from Hunan University. She is currently a professor at the School of Physics, Southeast University. Her research focuses on wafer-scale controllable synthesis of novel two-dimensional materials, their damage-free transfer and integration.
Xidong Duan received his Ph.D. degree from the Hunan University in 2016. He is now a professor at Hunan University, China. His research focuses on two-dimensional materials and their heterostructures, encompassing their preparation, physical properties, and applications.
Fig. 1.
(a) and (b) Differential charge density of vdW contact (a) and ALB contact (b) of Au and MoS2 system (red, positive; purple, negative). The isosurface level is 2.5 × 10−3 e bohr−3. The graph on the right is the corresponding electrostatic potential profile along the vertical direction. (c) Bonding energy of ALB and vdW interface obtained from calculation. (d) HAADF-STEM image of the ALB interface. Scale bar, 1 nm. (e) Contact resistance (RC) extracted from the typical TLM. (f) Output curves of the same device in 30-nm short-channel MoS2 FET. (g) and (h) Scanning electron microscopy images of short-channel MoS2 transistors with ALB contact (g) and Au direct contact (h) before and after heating. Scale bar, 200 nm. (i) Transport properties of MoS2 transistor with ALB contact and different types of Au contacts before and after annealing. (j) Radar plot of our ALB contact versus Sb vdW contact, benchmarked against industrial-grade contact performance. PC, process compatibility; RC, contact resistance (Ω·μm); σ, electrical conductivity (S/m); TC, thermal conductivity (W/mK); TS, thermomechanical stability (°C)[9].
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