ZnO nanowire network transistors based on a self-assembly method

Dai Zhenqing; Chen Changxin; Zhang Yaozhong; Wei Liangming; Zhang Jing; Xu Dong; Zhang Yafei

doi:10.1088/1674-4926/33/8/084003

J. Semicond. > 2012, Volume 33 > Issue 8 > 084003

SEMICONDUCTOR DEVICES

ZnO nanowire network transistors based on a self-assembly method

Dai Zhenqing, Chen Changxin, Zhang Yaozhong, Wei Liangming, Zhang Jing, Xu Dong and Zhang Yafei

+ Author Affiliations

Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China
Department of Physics and Chemistry, Hebei Normal University of Science and Technology, Qinhuangdao 066004, China
Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China
Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China
Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China
Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China
Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China
Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China

DOI: 10.1088/1674-4926/33/8/084003

Abstract: Dense, uniform ZnO nanowire (NW) networks are prepared by using a simple and sufficient self-assembly method. In this method, ZnO NWs are modified with aminopropyltriethoxysilane (APTES) to form positively charged amine-terminated surfaces. The modified ZnO NWs are adsorbed on negatively charged SiO₂/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution. Field-effect transistors (FETs) are fabricated and studied based on the ZnO NW networks. For a typical device with an NW density of 2.8 μm^-2, it exhibits a current on/off ratio of 2.4 × 10⁵, a transconductance of 336 nS, and a field-effect mobility of 27.4 cm²/(V·s).

Key words: self-assembly method, ZnO nanowire networks, field-effect transistors

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Dai Zhenqing, Chen Changxin, Zhang Yaozhong, Wei Liangming, Zhang Jing, Xu Dong, Zhang Yafei. ZnO nanowire network transistors based on a self-assembly method[J]. Journal of Semiconductors, 2012, 33(8): 084003. doi: 10.1088/1674-4926/33/8/084003

Dai Z Q, Chen C X, Zhang Y Z, Wei L M, Zhang J, Xu D, Zhang Y F. ZnO nanowire network transistors based on a self-assembly method[J]. J. Semicond., 2012, 33(8): 084003. doi: 10.1088/1674-4926/33/8/084003.

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Received: 21 August 2015 Revised: 02 June 2012 Online: Published: 01 August 2012

Dense, uniform ZnO nanowire (NW) networks are prepared by using a simple and sufficient self-assembly method. In this method, ZnO NWs are modified with aminopropyltriethoxysilane (APTES) to form positively charged amine-terminated surfaces. The modified ZnO NWs are adsorbed on negatively charged SiO₂/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution. Field-effect transistors (FETs) are fabricated and studied based on the ZnO NW networks. For a typical device with an NW density of 2.8 μm^-2, it exhibits a current on/off ratio of 2.4 × 10⁵, a transconductance of 336 nS, and a field-effect mobility of 27.4 cm²/(V·s).

ZnO nanowire network transistors based on a self-assembly method

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